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25 (10): 628–629, 1989. R. F. TAVLYKAEV R. V. RAMASWAMY University of Florida ELECTRO-OPTIC CRYSTALS. See PHOTOREFRACTIVE EFFECT. ELECTRO-OPTICS, INTEGRATED. See INTEGRATED OPTOELECTRONICS. htm }{{}} ● HOME ● ABOUT US ● CONTACT US ● HELP Home / Engineering / Electrical and Electronics Engineering Wiley Encyclopedia of Electrical and Electronics Engineering Integrated Optic Waveguides Standard Article Kin Seng Chiang1 1Department of Electronic Engineering, City University of Hong Kong, Kowloon, Hong Kong Copyright © 1999 by John Wiley & Sons, Inc.

For practical reasons, the substrate material may have a large refractive index. 8, which is larger than the indices of most other waveguide materials. To form a low-loss waveguide on a high-index substrate, we may insert a sufficiently thick low-index buffer layer between the guiding layer and the substrate. 45) can be grown directly on Si by thermal oxidation. It is expensive, however, to produce a thick enough (> 4 µm) SiO2 layer on Si. To overcome this problem, an interference cladding, which consists of Waveguides, Optical 7 a properly designed high-index film deposited on a SiO2 buffer layer, can be inserted between the guiding layer and the Si substrate to provide a large reflectivity (close to 100 %) at the operating wavelength of the waveguide.

16), which is then left with an arbitrary amplitude A. The propagation constants of the guided modes can be determined from Eq. (21), which is, in fact, identical to Eq. (5) obtained from the zig-zag wave model. With the knowledge of the propagation constants, the corresponding field distributions can be calculated from Eqs. (12)–(16). Figure 4 shows qualitatively the distributions of the electric-field components for several low-order TE and TM modes. The number of nulls (in the x direction) in the field distribution is simply equal to the mode order m.

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32.Lightwave Technology by John G. Webster (Editor)


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