By C.K Maiti, G.A Armstrong

ISBN-10: 0585488290

ISBN-13: 9780585488295

ISBN-10: 0750307234

ISBN-13: 9780750307239

The main major characteristic of this paintings is that it combines 3 exact issues - know-how, equipment layout and simulation, and functions - in a entire approach.

Readership

This e-book is meant to be used through senior undergraduate or first-year graduate scholars in utilized Physics, digital and electric Engineering, and fabrics Sciences, and as a reference for engineers and scientists keen on semiconductor equipment learn and improvement for RF functions.

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Extra info for Applications of silicon-germanium heterostructure devices

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In establishing its potential advantages and assessing its performance with respect to conventional transistors, a technology which provides denser and faster structures, and uses the standard processing technology and production equipment, research has been initiated. In fact, the SiGe technology has been implemented in the Si process lines by several manufacturers and is expected to facilitate a low-cost transfer of the new vertical SiGe heterostructure MOS into production. In addition, a CMOS possibility also exists if the heterojunction is made by a SiGe/Si(p-MOS) or SiGe/Ge(n-MOS) combination.

When compared with SiGe technologies, the addition of carbon offers a significantly greater flexibility in process design and a greater latitude in processing margins [54–56]. 9. Cut-off and maximum oscillation frequencies versus collector current for SiGeC HBTs. (After Osten H J et al 1999 IEEE BCTM Proc. 3. Possible applications of C-containing Si and SiGe films. ) Material advantages Possible device applications Increase performance and process margins for HBTs Suppress transient enhanced diffusion of boron Reduce undoped SiGe spacers HBT Increase thickness, stability, Ge content of Si1−x Gex p-Channel FET, npn HBT Use strained-Si1−y Cy on Si instead of Si on relaxed buffer n-Channel FET, pnp HBT Design new buffer concepts with Si1−x−y Gex Cy Use the reduction of dislocation propagation Virtual substrates for hetero-FETs Strain symmetrization on Si Superlattices on Si(001) for optical applications grown pseudomorphically onto Si(001) and their applications have been comprehensively reviewed by Osten [57].

Electron Devices 43 1518–24 [42] Karlsteen M and Willander M 1990 Optimized frequency characteristics of Si/SiGe heterojunction and conventional bipolar transistors Solid-State Electron. 33 199–204 28 Introduction [43] Oda K, Ohue E, Tanabe M, Shimamoto H, Onai T and Washio K 1997 130 GHz fT SiGe HBT technology IEEE IEDM Tech. Dig. pp 791–4 [44] Schuppen A, Erben U, Gruhle A, Kibbel H, Schumacher H and Konig U 1995 Enhanced SiGe heterojunction bipolar transistors with 160 GHz fmax IEEE IEDM Tech.

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Applications of silicon-germanium heterostructure devices by C.K Maiti, G.A Armstrong


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