By C.K Maiti, G.A Armstrong
The main major characteristic of this paintings is that it combines 3 exact issues - know-how, equipment layout and simulation, and functions - in a entire approach.
This e-book is meant to be used through senior undergraduate or first-year graduate scholars in utilized Physics, digital and electric Engineering, and fabrics Sciences, and as a reference for engineers and scientists keen on semiconductor equipment learn and improvement for RF functions.
Read Online or Download Applications of silicon-germanium heterostructure devices PDF
Similar electrical & electronic engineering books
This quantity is the 1st varied and accomplished remedy of algorithms and architectures for the conclusion of neural community structures. It offers options and various tools in different parts of this huge topic. The publication covers significant neural community platforms constructions for reaching potent platforms, and illustrates them with examples.
Der Autor gibt einfach nachvollziehbare Vorgaben in shape von Bausteinen, nach denen Bedienungsanleitungen und technische Dokumentationen geschrieben werden können. Geboten werden ein geschlossenes Konzept und praktische Rezepte für verständliche Formulierungen. Zudem liefert das Buch die Grundlagen für eine XML-strukturierte Dokumentation, die zunehmend eingesetzt wird.
The processing of semiconductor silicon for production reasonable photovoltaic items has been a box of accelerating task during the last decade. numerous equipment for decreasing the producing bills of uncooked fabrics, crystals, units and finish items were lower than improvement around the globe.
- Introduction to Radar Target Recognition (Radar, Sonar & Navigation)
- Frontiers of Thin Film Technology. (Volume 28)
- Fiber Optics Technician's Manual
- Towards a Dynamic Methodology of Science
- IEEE Std 399-1997, IEEE Recommended Practice for Industrial and Commercial Power Systems Analysis (The IEEE Brown Book)
- Digital Signal Processing: A Computer-Based Approach (Mcgraw-Hill Series in Electrical and Computer Engineering)
Extra info for Applications of silicon-germanium heterostructure devices
In establishing its potential advantages and assessing its performance with respect to conventional transistors, a technology which provides denser and faster structures, and uses the standard processing technology and production equipment, research has been initiated. In fact, the SiGe technology has been implemented in the Si process lines by several manufacturers and is expected to facilitate a low-cost transfer of the new vertical SiGe heterostructure MOS into production. In addition, a CMOS possibility also exists if the heterojunction is made by a SiGe/Si(p-MOS) or SiGe/Ge(n-MOS) combination.
When compared with SiGe technologies, the addition of carbon oﬀers a signiﬁcantly greater ﬂexibility in process design and a greater latitude in processing margins [54–56]. 9. Cut-oﬀ and maximum oscillation frequencies versus collector current for SiGeC HBTs. (After Osten H J et al 1999 IEEE BCTM Proc. 3. Possible applications of C-containing Si and SiGe ﬁlms. ) Material advantages Possible device applications Increase performance and process margins for HBTs Suppress transient enhanced diﬀusion of boron Reduce undoped SiGe spacers HBT Increase thickness, stability, Ge content of Si1−x Gex p-Channel FET, npn HBT Use strained-Si1−y Cy on Si instead of Si on relaxed buﬀer n-Channel FET, pnp HBT Design new buﬀer concepts with Si1−x−y Gex Cy Use the reduction of dislocation propagation Virtual substrates for hetero-FETs Strain symmetrization on Si Superlattices on Si(001) for optical applications grown pseudomorphically onto Si(001) and their applications have been comprehensively reviewed by Osten .
Electron Devices 43 1518–24  Karlsteen M and Willander M 1990 Optimized frequency characteristics of Si/SiGe heterojunction and conventional bipolar transistors Solid-State Electron. 33 199–204 28 Introduction  Oda K, Ohue E, Tanabe M, Shimamoto H, Onai T and Washio K 1997 130 GHz fT SiGe HBT technology IEEE IEDM Tech. Dig. pp 791–4  Schuppen A, Erben U, Gruhle A, Kibbel H, Schumacher H and Konig U 1995 Enhanced SiGe heterojunction bipolar transistors with 160 GHz fmax IEEE IEDM Tech.
Applications of silicon-germanium heterostructure devices by C.K Maiti, G.A Armstrong